| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,713 pcs
|
3713 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,964 pcs
|
2964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
527 pcs
|
527 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA18DP-T1-GE3 is a TrenchFET Gen IV power MOSFET designed for DC/DC conversion, battery protection, load switching, and DC/AC inverters. It features a 30V drain-source voltage and a maximum continuous drain current of 33A at 25°C case temperature.
This N-Channel MOSFET offers a low on-resistance of 7.5mOhm at 10A and 10V Vgs. The gate charge is typically 6.9nC at 10V Vgs. It operates within a temperature range of -55°C to 150°C junction temperature.
The device is packaged in a PowerPAK SO-8, suitable for surface mounting. It has a maximum power dissipation of 14.7W at 25°C case temperature and 3.3W at 25°C ambient temperature.
Key electrical characteristics include a gate-source voltage range of +20V to -16V and an input capacitance of 1000pF at 15V Vds. The gate threshold voltage is a maximum of 2.4V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8.
-55°C to 150°C (junction).
6.9 nC at 10V.
7.5 mOhm at 10A, 10V.
1000 pF at 15V Vds.
14.7W at case temperature 25°C.