| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA18BDP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It offers a drain-source voltage of 30V and a continuous drain current of up to 40A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 6.83mOhm at 10A and 10V Vgs, and a typical gate charge of 6.2nC. The MOSFET operates within a temperature range of -55°C to 150°C.
This component utilizes TrenchFET Gen IV technology and is packaged in a surface-mount PowerPAK SO-8. Its features make it suitable for applications such as high power density DC/DC converters, synchronous rectification, and power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The maximum continuous drain current is 40A at TC = 25°C.
The Rds On (Max) at Vgs = 10V is 0.00683 Ohm.
The package type is PowerPAK SO-8.
The operating temperature range is -55°C to 150°C.