| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34,020 pcs
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34020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Vishay SIRA18ADP-T1-GE3 is a TrenchFET Gen IV power MOSFET designed for various applications including DC/DC conversion, battery protection, load switching, DC/AC inverters, and synchronous buck converters.
This N-Channel MOSFET offers a Drain-Source Voltage (Vds) of 30V and a maximum continuous drain current of 30.6A at 25°C case temperature. It boasts a low on-resistance of 8.7mOhm at 10A, 10V, and 13.5mOhm at 24.5A, 4.5V. The device is tested for 100% Rg and UIS.
Packaged in a PowerPAK SO-8, this surface-mount MOSFET operates within a junction temperature range of -55°C to +150°C. Its thermal performance includes a maximum power dissipation of 14.7W at 25°C case temperature and a junction-to-ambient thermal resistance of 37°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vds) for the SIRA18ADP-T1-GE3 is 30V.
The maximum continuous drain current (Id) for the SIRA18ADP-T1-GE3 is 30.6A at a case temperature of 25°C.
The on-resistance (Rds On) is a maximum of 8.7mOhm at 10A, 10V, and a maximum of 13.5mOhm at 24.5A, 4.5V.
The operating junction and storage temperature range for the SIRA18ADP-T1-GE3 is -55°C to +150°C.
The SIRA18ADP-T1-GE3 MOSFET is in a PowerPAK SO-8 package.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.