| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA12BDP-T1-GE3 is a single N-Channel MOSFET designed for high power density applications. It features a 30V drain-source voltage and a low on-resistance of 4.3mOhm at 10A and 10V gate-source voltage. The continuous drain current is rated at 74A at 25°C case temperature.
This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 32nC at 10V and an input capacitance of 1470pF at 15V.
Applications include high power density DC/DC converters, synchronous rectification, and VRMs. The device is built using TrenchFET Gen IV technology and is 100% Rg and UIS tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
The maximum Rds On is 4.3mOhm at 10A drain current and 10V gate-source voltage.
The continuous drain current is 74A at 25°C case temperature, 59A at 70°C case temperature, 27A at 25°C ambient temperature, and 22A at 70°C ambient temperature.
The operating junction and storage temperature range is -55°C to +150°C.
It is in a PowerPAK SO-8 package, designed for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.