| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,663 pcs
|
2663 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA10DP-T1-GE3 is an N-Channel MOSFET designed for high power density applications. It offers a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 60A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 3.7mOhm at 10A and 10V VGS, and 5mOhm at 60A and 4.5V VGS. The gate charge (Qg) is typically 15.4nC at 4.5V VGS. The device operates over a temperature range of -55°C to 150°C.
This MOSFET is housed in a PowerPAK SO-8 surface-mount package. It is suitable for applications such as DC/DC converters, synchronous rectification, and VRMs, offering high power density and efficient operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V maximum.
60 A at Tc = 25°C, package limited.
3.7 mOhm maximum at Id = 10A, Vgs = 10V.
-55°C to 150°C junction temperature.
PowerPAK SO-8, surface mount.
2.2V maximum at Id = 250 µA.