SIRA04DP-T1-GE3 The Vishay Dale SIRA04DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous current rating. It features low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIRA04DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIRA04DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous current rating. It features low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 91,327 pcs
$ Price Range: $0.99

SIRA04DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
91,020 pcs
91020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
307 pcs
307 pcs On Request 1 On Request On Request 16+ On Request On Request

SIRA04DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIRA04DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiRA04DP is a TrenchFET Gen IV power MOSFET designed for applications requiring high power density. This N-Channel MOSFET offers a 30V drain-source voltage and a continuous drain current of up to 40A.

 

Key electrical characteristics include a maximum on-resistance of 2.15 mOhm at 15A and 10V Vgs, and 3.10 mOhm at Vgs of 4.5V. The typical gate charge is 22.5 nC. The device operates over a wide temperature range from -55°C to +150°C.

 

Designed for surface mounting, the SiRA04DP utilizes the PowerPAK SO-8 package. This package provides efficient thermal performance with a junction-to-case thermal resistance of 1.6 °C/W. It is suitable for synchronous rectification, high power density DC/DC converters, and VRMs.

 

The MOSFET is 100% Rg and UIS tested, ensuring reliability for demanding applications.

SIRA04DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiRA04DP N-Channel 30 V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIRA04DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIRA04DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRA04DP-T1-GE3 Features

  • TrenchFET Gen IV power MOSFET technology.
  • 30V drain-source voltage rating.
  • 40A continuous drain current.
  • Low on-resistance: 2.15mOhm at 10V.
  • Surface mount PowerPAK SO-8 package.

SIRA04DP-T1-GE3 Applications

  • Used in DC/DC converter applications.
  • Ideal for synchronous rectification.
  • Suitable for load switching.
  • Motor drive circuits.
  • Battery management systems.

SIRA04DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What continuous drain current can it handle?

40A at case temperature 25°C; 35.9A at ambient temperature 25°C.

What is the typical gate charge?

22.5 nC typical at VGS=10V.

What is the on-resistance?

2.15 mOhm maximum at VGS=10V, 15A; 3.1 mOhm at VGS=4.5V.

What is the package type?

PowerPAK SO-8 surface mount.

What is the operating temperature range?

-55°C to +150°C junction and storage temperature.

What is the maximum input capacitance?

3595 pF at VDS=15V.

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