| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiR890DP is an N-Channel TrenchFET® Power MOSFET designed for efficient power conversion. With a drain-source voltage of 20V and a continuous drain current of 50A at 25°C case temperature, this MOSFET is suitable for demanding applications.
Key electrical characteristics include a low on-resistance of 2.9 mOhm at 10A and 10V Vgs, and a gate charge of 60 nC. The device operates over a temperature range of -55°C to 150°C.
Packaged in a surface-mount PowerPAK® SO-8, the SiR890DP is well-suited for low-side MOSFET applications in synchronous buck DC-to-DC converters. It also features 100% R g and UIS testing for enhanced reliability.
This component is halogen-free and meets RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum continuous drain current is 50A at 25°C case temperature.
The on-resistance is 2.9 mOhm at 10A and 10V Vgs.
The operating temperature range is -55°C to 150°C.
It is supplied in a PowerPAK® SO-8 surface mount package.
Yes, it is RoHS3 Compliant.
Yes, it is halogen-free.