| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR880DP-T1-GE3 is a high-performance N-Channel MOSFET belonging to the TrenchFET® power MOSFET family. It is rated for a drain-source voltage of 80V and can handle a continuous drain current of up to 60A under specific conditions.
Key electrical characteristics include a maximum on-resistance of 5.9mOhm at 20A and 10V Vgs, and a gate charge of 74nC typical at 10V Vgs. The MOSFET operates within a temperature range of -55°C to +150°C (TJ).
This component is housed in a PowerPAK® SO-8 package, designed for surface mounting. Its robust construction and electrical specifications make it suitable for applications such as fixed telecom, POL, DC/DC converters, and primary side switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The maximum continuous drain current is 60A.
The typical gate charge is 23nC at 10V Vgs.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in a PowerPAK SO-8 package.