SIR880ADP-T1-GE3 The Vishay Dale SIR880ADP-T1-GE3 is an N-Channel MOSFET with an 80V drain-source voltage and 60A continuous current rating. It features a low on-resistance and is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIR880ADP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR880ADP-T1-GE3 is an N-Channel MOSFET with an 80V drain-source voltage and 60A continuous current rating. It features a low on-resistance and is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 20,698 pcs
$ Price Range: $0.99

SIR880ADP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,800 pcs
18800 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
1,898 pcs
1898 pcs On Request 1 On Request On Request On Request On Request On Request

SIR880ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Temperature
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SIR880ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR880ADP-T1-GE3 is an N-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage of 80V and a continuous drain current of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 6.3mOhm at 20A and 10V Vgs, and a gate charge of 72nC at 10V Vgs. The device operates over a temperature range of -55°C to +150°C.

 

This MOSFET is packaged in a PowerPAK SO-8 surface-mount package, suitable for various power conversion circuits such as primary side switches, isolated DC/DC converters, full bridges, and synchronous rectification. Its TrenchFET power MOSFET technology ensures high performance and reliability.

SIR880ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 80 V Power MOSFET
Subcategory: N-Channel

SIR880ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIR880ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR880ADP-T1-GE3 Features

  • N-Channel 80V Power MOSFET
  • 60A continuous drain current
  • Low on-resistance: 6.3mOhm max.
  • Surface mount PowerPAK SO-8 package
  • TrenchFET power MOSFET technology

SIR880ADP-T1-GE3 Applications

  • Primary side switch applications
  • Isolated DC/DC converters
  • Full bridge circuits
  • Synchronous rectification

SIR880ADP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIR880ADP-T1-GE3?

The maximum drain-source voltage is 80V.

What is the continuous drain current rating?

The continuous drain current is 60A at 25°C case temperature.

What is the on-resistance of the SIR880ADP-T1-GE3?

The maximum on-resistance is 6.3mOhm at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the SIR880ADP-T1-GE3?

It is supplied in a PowerPAK SO-8 surface mount package.

Is the SIR880ADP-T1-GE3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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