| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR878DP-T1-GE3 is an N-Channel MOSFET designed for various applications including DC/DC primary side switching, telecom/server 48V systems, and industrial use. It features a high drain-source breakdown voltage of 100V and a maximum continuous drain current of 40A at 25°C case temperature.
This MOSFET offers a low on-resistance of 14mOhm at 15A and 10V gate-source voltage, contributing to efficient power handling. The gate charge is a maximum of 43nC at 10V. It operates within a wide temperature range of -55°C to 150°C.
The device is packaged in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. It is also halogen-free, complying with IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The maximum continuous drain current is 40 A at 25°C case temperature.
The maximum on-resistance is 14 mOhm at 15A and 10V gate-source voltage.
It is supplied in a PowerPAK SO-8 package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
Yes, it is halogen-free.