SIR878ADP-T1-GE3 The Vishay Dale SIR878ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR878ADP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR878ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 2,787 pcs
$ Price Range: $0.99

SIR878ADP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,723 pcs
2723 pcs On Request 1 On Request On Request 16+ On Request On Request
Non-Authorised Inventory information
64 pcs
64 pcs On Request 1 On Request On Request On Request On Request On Request

SIR878ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR878ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR878ADP-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 40A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 14mOhm at 15A and 10V Vgs, ensuring efficient power transfer. The gate charge (Qg) is typically 13.9 nC at 10V Vgs. It operates within a junction temperature range of -55°C to 150°C.

 

The device is packaged in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. Its applications include DC/DC primary side switching, Telecom/Server 48V Full/Half-Bridge DC/DC converters, and industrial power systems.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2.8V at 250µA. The maximum power dissipation is 44.5W at 25°C case temperature and 5W at 25°C ambient temperature.

SIR878ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR878ADP-T1-GE3 N-Channel 100V PowerPAK SO-8 MOSFET

SIR878ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR878ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR878ADP-T1-GE3 Features

  • N-Channel 100V Power MOSFET.
  • 40A continuous drain current.
  • Low on-resistance: 14mOhm @ 15A, 10V.
  • PowerPAK SO-8 surface mount package.
  • Suitable for DC/DC and industrial applications.

SIR878ADP-T1-GE3 Applications

  • DC-DC converter and power supply circuits.
  • Motor control and drive applications.
  • Battery management and protection systems.
  • Load switching and power distribution.

SIR878ADP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIR878ADP-T1-GE3?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current of the SIR878ADP-T1-GE3?

The continuous drain current (Id) is 40A at 25°C case temperature.

What is the package type for the SIR878ADP-T1-GE3?

The SIR878ADP-T1-GE3 is supplied in a PowerPAK SO-8 package.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the SIR878ADP-T1-GE3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

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