| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63,829 pcs
|
63829 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR876ADP-T1-GE3 is a TrenchFET® power MOSFET designed for DC/DC primary side switching, telecom/server 48V applications, and industrial uses. It features a 100V drain-source breakdown voltage and a low on-resistance of 10.8mOhm at 10V gate-source voltage.
This N-Channel MOSFET offers a continuous drain current of 40A and a maximum power dissipation of 62.5W (Tc). It operates within a temperature range of -55°C to +150°C. The device is housed in a PowerPAK® SO-8 package, suitable for surface mounting.
Key electrical characteristics include a gate charge of 49 nC and an input capacitance of 1630 pF. The MOSFET is tested for Rg and UIS, ensuring reliability in demanding applications. Its robust design makes it suitable for various power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The maximum continuous drain current is 40A.
The maximum on-resistance at 20A drain current and 10V gate-source voltage is 10.8mOhm.
The operating temperature range is -55°C to +150°C.
The SIR876ADP-T1-GE3 is in a PowerPAK SO-8 package.
The RoHS status is Compliant.
The Moisture Sensitivity Level is 1.