SIR876ADP-T1-GE3 The Vishay SIR876ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 40A continuous drain current. It is designed for applications requiring efficient power switching.
Mfr Part #:

SIR876ADP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SIR876ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 40A continuous drain current. It is designed for applications requiring efficient power switching.
✓ Total Stock: 67,849 pcs
$ Price Range: $0.99

SIR876ADP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
63,829 pcs
63829 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

SIR876ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR876ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay SIR876ADP-T1-GE3 is a TrenchFET® power MOSFET designed for DC/DC primary side switching, telecom/server 48V applications, and industrial uses. It features a 100V drain-source breakdown voltage and a low on-resistance of 10.8mOhm at 10V gate-source voltage.

 

This N-Channel MOSFET offers a continuous drain current of 40A and a maximum power dissipation of 62.5W (Tc). It operates within a temperature range of -55°C to +150°C. The device is housed in a PowerPAK® SO-8 package, suitable for surface mounting.

 

Key electrical characteristics include a gate charge of 49 nC and an input capacitance of 1630 pF. The MOSFET is tested for Rg and UIS, ensuring reliability in demanding applications. Its robust design makes it suitable for various power management solutions.

SIR876ADP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SIRxxxADP
Canonical Name: Vishay SIR876ADP-T1-GE3 N-Channel 100V Power MOSFET
Subcategory: N-Channel

SIR876ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR876ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR876ADP-T1-GE3 Features

  • 100V drain-source breakdown voltage.
  • 40A continuous drain current capability.
  • Low 10.8mOhm on-resistance at 10V.
  • N-Channel TrenchFET® power MOSFET.
  • PowerPAK SO-8 surface mount package.

SIR876ADP-T1-GE3 Applications

  • DC/DC primary side switching.
  • Telecom and server 48V systems.
  • Full and half-bridge DC/DC converters.
  • Industrial power applications.

SIR876ADP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SIR876ADP-T1-GE3?

The drain-source breakdown voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 40A.

What is the on-resistance at 10V gate-source voltage?

The maximum on-resistance at 20A drain current and 10V gate-source voltage is 10.8mOhm.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the SIR876ADP-T1-GE3 in?

The SIR876ADP-T1-GE3 is in a PowerPAK SO-8 package.

Is the SIR876ADP-T1-GE3 RoHS compliant?

The RoHS status is Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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