SIR873DP-T1-GE3 The Vishay Dale SIR873DP-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 37A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIR873DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR873DP-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 37A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 37,572 pcs
$ Price Range: $0.99

SIR873DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SIR873DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR873DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR873DP-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of up to 37A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds(on)) of 47.5mOhm at 10A and 10V gate drive voltage, minimizing conduction losses. The gate charge (Qg) is typically 31.8nC, and the input capacitance (Ciss) is 1805pF at 75V.

 

The device operates within a junction temperature range of -55°C to 150°C. It is packaged in a PowerPAK SO-8 surface-mount package, suitable for various power supply and motor control applications.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage of ±20V. The maximum power dissipation is 104W at 25°C case temperature.

SIR873DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR873DP-T1-GE3 P-Channel 150V PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SIR873DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR873DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR873DP-T1-GE3 Features

  • P-Channel 150V MOSFET
  • 37A continuous drain current
  • Low 47.5mOhm Rds(on)
  • PowerPAK SO-8 package
  • Surface mountable design

SIR873DP-T1-GE3 Applications

  • Active clamp in DC/DC supplies
  • Battery protection circuits
  • Load switching applications
  • Motor drive control systems

SIR873DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIR873DP-T1-GE3?

-150 V

What is the package type of the SIR873DP-T1-GE3?

PowerPAK SO-8

What is the operating temperature range of the SIR873DP-T1-GE3?

-55°C to 150°C

What is the continuous drain current at 25°C case temperature?

-37 A

What is the on-resistance of the MOSFET?

47.5 mOhm maximum at 10A, 10V

What is the gate charge of the SIR873DP-T1-GE3?

48 nC at 10V

What is the maximum power dissipation at case temperature 25°C?

104 W

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