SIR872ADP-T1-GE3 The Vishay Dale SIR872ADP-T1-GE3 is an N-Channel MOSFET with a 150V drain-source voltage and a continuous drain current of 53.7A. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR872ADP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR872ADP-T1-GE3 is an N-Channel MOSFET with a 150V drain-source voltage and a continuous drain current of 53.7A. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 16,474 pcs
$ Price Range: $0.99

SIR872ADP-T1-GE3 Available from 4 distributors

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✓ Non-Authorised
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9,000 pcs
9000 pcs On Request 1 On Request On Request 19+ On Request On Request
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3,000 pcs
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2,723 pcs
2723 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,751 pcs
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SIR872ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR872ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR872ADP-T1-GE3 is a high-performance N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 53.7A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 18mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer.

 

This device utilizes TrenchFET® technology and is 100% Rg and UIS tested, indicating robust performance and reliability. The operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. The input capacitance (Ciss) is 1286 pF at 75V, and the gate charge (Qg) is typically 22.8 nC at 10V.

 

The SIR872ADP-T1-GE3 is packaged in a PowerPAK® SO-8 surface-mount package, designed for efficient thermal management with a maximum power dissipation of 104W at 25°C case temperature. It is suitable for applications such as fixed telecom and DC/DC converters, serving as a primary and secondary side switch.

SIR872ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR872ADP-T1-GE3 N-Channel 150V Power MOSFET
Subcategory: N-Channel

SIR872ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIR872ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR872ADP-T1-GE3 Features

  • N-Channel 150V Power MOSFET
  • Low Rds On: 18mOhm at 20A, 10V
  • High continuous drain current: 53.7A
  • TrenchFET® technology for efficiency
  • PowerPAK SO-8 surface mount package

SIR872ADP-T1-GE3 Applications

  • Ideal for DC/DC converter primary switches.
  • Used in high-efficiency synchronous rectification.
  • Suitable for motor control and load switching.
  • Designed for battery protection circuits.
  • Works in power management for industrial systems.

SIR872ADP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIR872ADP-T1-GE3?

The maximum drain-source voltage (Vds) is 150 V.

What is the continuous drain current of the SIR872ADP-T1-GE3?

The continuous drain current is 53.7A at 25°C case temperature.

What is the on-resistance of the SIR872ADP-T1-GE3?

The Rds On is a maximum of 18mOhm at 20A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIR872ADP-T1-GE3 in?

The component is supplied in a PowerPAK SO-8 package.

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