| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
278,154 pcs
|
278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,001 pcs
|
2001 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR871DP-T1-GE3 is a P-Channel ThunderFET® power MOSFET designed for high-density power applications. It offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 48A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 20mOhm at 20A and 10V Vgs, and 28mOhm at 20A and 4.5V Vgs. The gate charge (Qg) is typically 26.5nC. The MOSFET operates within a junction temperature range of -55°C to +150°C.
This device is packaged in a thermally enhanced PowerPAK® SO-8 surface-mount package. Its low Rds(on) and robust thermal performance make it suitable for applications such as active clamps, motor drive switches, DC/DC converters, battery and circuit protection, and load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-source voltage is -100V.
PowerPAK® SO-8 surface-mount package.
-55°C to 150°C (junction temperature).
20mOhm at 20A, 10V gate drive; 28mOhm at 20A, 4.5V gate drive.
-48A at Tc=25°C, -38.7A at Tc=70°C, -11.6A at Ta=25°C.
Maximum 90nC at 10V gate voltage, typical 26.5nC.
3395pF at Vds=50V.