SIR870DP-T1-GE3 The Vishay Dale SIR870DP-T1-GE3 is an N-Channel MOSFET designed for various applications. It offers a 100V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SIR870DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR870DP-T1-GE3 is an N-Channel MOSFET designed for various applications. It offers a 100V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 11,505 pcs
$ Price Range: $0.99

SIR870DP-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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9,688 pcs
9688 pcs On Request 1 On Request On Request On Request On Request On Request
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1,104 pcs
1104 pcs On Request 1 On Request On Request On Request On Request On Request
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713 pcs
713 pcs On Request 1 On Request On Request 15+ On Request On Request

SIR870DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR870DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR870DP-T1-GE3 is an N-Channel MOSFET featuring TrenchFET® technology. It is rated for a drain-source voltage of 100V and can handle a continuous drain current of 60A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance, with a maximum of 6mOhm at a gate-source voltage of 10V and a drain current of 20A. Its input capacitance is rated at 2840 pF at 50V, and the gate charge is a maximum of 84 nC at 10V.

 

This device operates within a temperature range of -55°C to 150°C. It is housed in a PowerPAK SO-8 surface-mount package. The maximum power dissipation is 104W when measured at the case temperature (Tc) of 25°C, and 6.25W when measured at the ambient temperature (Ta) of 25°C. The gate-source voltage has a maximum rating of ±20V.

 

Applications for this MOSFET include fixed telecom, DC/DC converters, and primary and secondary side switching. It is suitable for designs requiring efficient power switching and high current handling capabilities within a compact surface-mount form factor.

SIR870DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 100 V MOSFET
Subcategory: N-Channel

SIR870DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR870DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR870DP-T1-GE3 Features

  • 100V drain-source voltage rating.
  • 60A continuous drain current capability.
  • Low on-resistance of 6mOhm.
  • PowerPAK SO-8 surface-mount package.
  • Wide operating temperature range.

SIR870DP-T1-GE3 Applications

  • Suitable for fixed telecom systems.
  • Used in DC/DC converter designs.
  • Applicable for primary side switching.
  • Applicable for secondary side switching.

SIR870DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SIR870DP-T1-GE3?

100V.

What is the package type of the SIR870DP-T1-GE3?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C.

What is the on-resistance of the SIR870DP-T1-GE3?

6mOhm maximum at 20A, 10V.

What is the gate threshold voltage?

3V maximum at 250µA.

What is the continuous drain current rating?

60A at case temperature 25°C.

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