SIR870ADP-T1-GE3 The Vishay Dale SIR870ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 60A continuous current rating. It comes in a PowerPAK SO-8 surface mount package.
Mfr Part #:

SIR870ADP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR870ADP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 60A continuous current rating. It comes in a PowerPAK SO-8 surface mount package.
✓ Total Stock: 9,099 pcs
$ Price Range: $0.99

SIR870ADP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,610 pcs
3610 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
3,314 pcs
3314 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,175 pcs
2175 pcs On Request 1 On Request On Request 20+ On Request On Request

SIR870ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR870ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR870ADP-T1-GE3 is a high-performance N-Channel power MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 60A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 6.6mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is typically 25.5 nC, and the gate-source voltage range is ±20V, with a threshold voltage of 3V at 250µA.

 

Designed for surface mounting, the SIR870ADP-T1-GE3 utilizes the PowerPAK SO-8 package, providing excellent thermal performance with a maximum power dissipation of 104W at 25°C case temperature. Its operating temperature range is -55°C to +150°C (TJ).

 

Key applications include fixed telecom power supplies and DC/DC converters, where it can function as a primary or secondary side switch. The device is manufactured using TrenchFET® technology and is 100% Rg and UIS tested.

SIR870ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR870ADP-T1-GE3 N-Channel 100V Power MOSFET
Subcategory: N-Channel

SIR870ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR870ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR870ADP-T1-GE3 Features

  • N-Channel 100V Power MOSFET
  • Low Rds On: 6.6mOhm at 20A, 10V
  • High continuous current: 60A
  • PowerPAK SO-8 surface mount package
  • Suitable for DC/DC converters

SIR870ADP-T1-GE3 Applications

  • Ideal for high-efficiency power conversion circuits.
  • Used in DC-DC converter output stages.
  • Suitable for motor drive and load switching.
  • Applicable in battery management systems.

SIR870ADP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of this MOSFET?

100 V.

What is the continuous drain current rating?

60 A at case temperature 25°C.

What is the on-resistance at 20A, 10V?

6.6 mOhm maximum.

What is the operating junction temperature range?

-55°C to +150°C.

What package is this MOSFET available in?

PowerPAK SO-8 surface mount package.

What is the gate threshold voltage?

3V at 250 µA drain current.

What is the maximum power dissipation?

104W at case temperature 25°C.

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