| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,829 pcs
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25829 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The Vishay Dale SIR870ADP is an N-Channel power MOSFET with a Drain-Source Voltage rating of 100V. It is built using Vishay's TrenchFET® technology, offering high performance and efficiency.
Key electrical characteristics include a maximum Drain-Source On-Resistance (RDS(on)) of 0.0066 Ω at a Gate-Source Voltage (VGS) of 10V, and 0.0070 Ω at VGS = 7.5V. The typical Gate Charge (Qg) is 25.5 nC. Continuous drain current capabilities vary with temperature, reaching up to 88.8A at TC = 25°C.
This MOSFET is suitable for applications such as fixed telecom, DC/DC converters, and primary and secondary side switching. It is supplied in a PowerPAK SO-8 surface-mount package.
Absolute maximum ratings include a continuous drain current of 88.8A and a pulsed drain current of 300A. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 100 V.
The maximum Gate-Source Voltage is ± 20 V.
The maximum continuous drain current at TC = 25°C is 88.8 A.
The maximum RDS(on) at VGS = 10V is 0.0066 Ω.
The typical Gate Charge is 25.5 nC.
The package type is PowerPAK SO-8.
The RoHS status is RoHS3 Compliant.