SIR866DP-T1-GE3 The Vishay Dale SIR866DP-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 60A continuous current rating. It features low Rds(on) and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR866DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR866DP-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 60A continuous current rating. It features low Rds(on) and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 185 pcs
$ Price Range: $0.99

SIR866DP-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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185 pcs
185 pcs On Request 1 On Request On Request 09+ On Request On Request

SIR866DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR866DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR866DP is an N-Channel MOSFET designed for applications requiring high efficiency and low on-resistance. It features TrenchFET Gen III technology, offering optimized PWM characteristics and low Rds(on) of 1.9mOhm at 10V Vgs.

 

With a 20V drain-source voltage and a continuous drain current rating of 60A at 25°C case temperature, this MOSFET is suitable for demanding power management tasks. Its low input capacitance and gate charge contribute to efficient switching performance.

 

The device is packaged in a PowerPAK SO-8, a surface-mount package designed for efficient thermal management. It operates across a wide temperature range of -55°C to 150°C.

 

Key features include 100% Rg and UIS tested, making it reliable for applications such as fixed telecom power supplies, low-side dc-to-dc converters, and OR-ing circuits.

SIR866DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiR866DP N-Channel 20V MOSFET
Subcategory: N-Channel

SIR866DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIR866DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR866DP-T1-GE3 Features

  • N-Channel 20V TrenchFET Gen III MOSFET
  • Low Rds(on) of 1.9mOhm at 10V Vgs
  • 60A continuous drain current
  • PowerPAK SO-8 surface mount package
  • Optimized for PWM and low-side applications

SIR866DP-T1-GE3 Applications

  • Ideal for synchronous rectification in power supplies.
  • Used in DC-DC converter applications.
  • Suitable for load switching and battery protection.
  • Designed for motor control circuits.
  • Common in computing and telecom power systems.

SIR866DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIR866DP-T1-GE3?

The maximum drain-source voltage (Vds) is 20 V.

What package does the SIR866DP-T1-GE3 come in?

The package is PowerPAK SO-8.

What is the operating temperature range for the SIR866DP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What is the continuous drain current rating of the SIR866DP-T1-GE3?

The continuous drain current is 60 A at case temperature 25°C.

What is the typical on-resistance of the SIR866DP-T1-GE3?

The typical on-resistance is 1.9 mOhm at Vgs=10V and Id=20A.

Is the SIR866DP-T1-GE3 a surface mount device?

Yes, it is surface mount with PowerPAK SO-8 package.

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