| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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181 pcs
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181 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Vishay Dale SIR862DP-T1-GE3 is a high-performance N-Channel power MOSFET designed for demanding applications. It features Vishay's TrenchFET technology, offering low on-resistance and excellent thermal performance.
With a drain-source voltage (Vds) of 25V and a continuous drain current (Id) of up to 50A at 25°C case temperature, this MOSFET is suitable for high-power switching. The Rds(on) is as low as 2.8mOhm at 10V Vgs, ensuring efficient power transfer and minimizing heat generation.
The device operates over a wide temperature range of -55°C to 150°C (TJ). It is packaged in a PowerPAK SO-8 surface-mount package, which provides a small footprint and good thermal dissipation capabilities. The MOSFET is 100% Rg and UIS tested, ensuring reliability and robust performance in various operating conditions.
Applications include DC/DC conversion, low-side switching in notebooks, servers, and game consoles. Its robust design and specifications make it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
PowerPAK® SO-8 surface mount package.
-55°C to 150°C (junction temperature).
50 A at Tc=25°C, 32 A at TA=25°C, and 22.8 A at TA=70°C.
2.8 mOhm maximum at Vgs=10V, Id=15A; 3.5 mOhm maximum at Vgs=4.5V.
28.4 nC at Vgs=10V.