Mfr Part #:

SIR850DP-T1-GE3

Mfr Name: Vishay

The Vishay SIR850DP-T1-GE3 is an N-Channel MOSFET with a 25V drain-source voltage and 30A continuous drain current. It is housed in a PowerPAK SO-8 package.

✓ Total Stock: 128,641 pcs

$ Price Range: $0.99

SIR850DP-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	120,533 pcs On Request	120533 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	8,078 pcs On Request	8078 pcs	On Request	1	On Request	On Request	07+	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	30 pcs On Request	30 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SIR850DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SiR850DP is an N-Channel Power MOSFET designed for applications such as high-side synchronous buck converters. It features a 25V drain-source breakdown voltage and a maximum continuous drain current of 30A at 25°C case temperature.

This MOSFET offers a low on-state resistance, with a typical value of 7mΩ at 20A and 10V Vgs. The gate charge is typically 8.4 nC at 10V Vgs. The device operates over a temperature range of -55°C to 150°C (TJ).

Packaged in a PowerPAK SO-8, this surface-mount component is suitable for various power management designs. The PowerPAK SO-8 is a leadless package with exposed copper terminals.

Key electrical characteristics include a gate-source voltage range of ±20V and a maximum power dissipation of 41.7W at 25°C case temperature. The device is designed with TrenchFET technology and is tested for R_g and UIS.

SIR850DP-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay SiR850DP N-Channel 25-V (D-S) MOSFET

Subcategory: Single

SIR850DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SIR850DP-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR850DP-T1-GE3 Features

N-Channel 25V Power MOSFET.
Low Rds(on) of 7mΩ at 20A, 10V.
30A continuous drain current.
PowerPAK SO-8 surface mount package.
Suitable for synchronous buck applications.

SIR850DP-T1-GE3 Applications

Suitable for DC-DC converter circuits.
Used in power management and load switching.
Ideal for battery protection applications.
Can be used in motor control circuits.

SIR850DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SIR850DP-T1-GE3?

25V.

What is the maximum continuous drain current?

30A at case temperature 25°C.

What is the typical on-resistance?

7mOhm at VGS=10V.

What is the operating temperature range?

-55°C to 150°C.

What package is the SIR850DP-T1-GE3 available in?

PowerPAK SO-8 surface mount package.

What is the typical gate charge?

8.4nC at VGS=10V.

What is the maximum power dissipation?

41.7W at case temperature 25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	30A (Tc)
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1120 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55 °C / +150 °C
Power Dissipation (Max)	4.8W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs	7mOhm
Supplier Device Package	PowerPAK® SO-8
Supplier Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA