| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
574 pcs
|
574 pcs | On Request | 1 | On Request | On Request | 1123 | On Request | On Request | |
|
113 pcs
|
113 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIR846DP-T1-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 100V and a maximum gate-source voltage (Vgs) of 20V. The device supports a continuous drain current of 60A, making it suitable for moderate to high power circuits.
The MOSFET is packaged in a PPAK SO-8 surface-mount package, which offers a compact footprint for space-constrained designs. The package is optimized for thermal performance and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The maximum gate-source voltage (Vgs) is 20V.
The continuous drain current is 60A.
It is available in a PPAK SO-8 surface-mount package.