| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
108 pcs
|
108 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SIR838DP-T1-GE3 is a single N-Channel MOSFET from the TrenchFET® series. It offers a drain-to-source voltage (Vdss) of 150V and can handle a continuous drain current (Id) of 35A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 33mOhm at 8.3A and 10V, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 2075pF at 75V, and the gate charge (Qg) is 50nC at 10V. Maximum power dissipation is rated at 5.4W (Ta) and 96W (Tc).
This MOSFET features a surface mountable PowerPAK® SO-8 package, making it suitable for various electronic applications where space efficiency is important. The operating temperature range is -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 150V.
The continuous drain current is 35A at 25°C.
The maximum on-resistance is 33mOhm at 8.3A drain current and 10V gate-source voltage.
It comes in a PowerPAK SO-8 package for surface-mount assembly.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate-source voltage is ±20V.