| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR836DP-T1-GE3 is a single N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 21A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 19mOhm at 10A and 10V Vgs, and 0.0190 Ohm at 10A and 10V Vgs. The gate charge (Qg) is typically 5.8nC. It operates within a temperature range of -55°C to 150°C.
The device is packaged in a PowerPAK SO-8 surface-mount package. It is suitable for applications requiring efficient power switching and rectification.
Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 600pF at 20V. The maximum power dissipation is 15.6W at 25°C case temperature and 3.9W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40 V.
The continuous drain current is 21A at 25°C case temperature.
The maximum on-resistance is 19mOhm at 10A and 10V Vgs.
The SIR836DP-T1-GE3 is available in a PowerPAK SO-8 package.
The operating temperature range is -55°C to 150°C.