SIR826BDP-T1-RE3 The Vishay Dale SIR826BDP-T1-RE3 is an N-Channel MOSFET with 80V drain-source voltage and high continuous current ratings. It features a low Rds(on) and is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIR826BDP-T1-RE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR826BDP-T1-RE3 is an N-Channel MOSFET with 80V drain-source voltage and high continuous current ratings. It features a low Rds(on) and is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

SIR826BDP-T1-RE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 21+ On Request On Request

SIR826BDP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR826BDP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR826BDP-T1-RE3 is an N-Channel MOSFET designed for various power applications. It offers a drain-source voltage of 80V and supports continuous drain currents of up to 19.8A at ambient temperature and 80.8A at case temperature.

 

Key electrical characteristics include a maximum Rds(on) of 5.1mOhm at 15A and 10V Vgs, and a gate charge (Qg) of 69nC typical at 10V Vgs. The MOSFET operates within a wide temperature range of -55°C to 150°C.

 

This component utilizes TrenchFET® Gen IV technology, known for its low RDS-Qg figure-of-merit. It is suitable for applications such as synchronous rectification, DC/DC converters, power supplies, and motor drive control.

 

The device is packaged in a surface-mount PowerPAK® SO-8, facilitating integration into compact electronic designs.

SIR826BDP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: SiR826BDP N-Channel 80V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR826BDP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR826BDP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR826BDP-T1-RE3 Features

  • 80V drain-source voltage rating.
  • High continuous drain current.
  • Low Rds(on) at 10V.
  • TrenchFET® Gen IV power MOSFET.
  • Surface mount PowerPAK SO-8 package.

SIR826BDP-T1-RE3 Applications

  • Used in synchronous rectification circuits.
  • Suitable for DC/DC converters.
  • Applied in power supply designs.
  • Used for motor drive control.

SIR826BDP-T1-RE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 80V.

What is the maximum continuous drain current?

The maximum continuous drain current is 80.8A at case temperature (Tc=25°C) and 19.8A at ambient temperature (Ta=25°C).

What is the drain-source on-resistance?

The maximum on-resistance is 5.1mOhm at Vgs=10V (15A test condition) and 6.2mOhm at Vgs=7.5V.

What package does the SIR826BDP-T1-RE3 come in?

The device is packaged in PowerPAK SO-8 (surface mount).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the gate charge?

The maximum gate charge is 69nC at Vgs=10V. Typical gate charge is 35nC.

What is the input capacitance?

The maximum input capacitance is 3030pF at Vds=40V.

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