| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,389 pcs
|
5389 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR826ADP-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 60A at 25°C case temperature. The MOSFET exhibits a low on-resistance, with a maximum of 5.5mOhm at a gate-source voltage of 10V and a drain current of 20A.
This device utilizes TrenchFET power MOSFET technology, ensuring efficient power handling. It is packaged in a PowerPAK SO-8 surface-mount package, suitable for automated assembly processes. The operating temperature range is -55°C to 150°C (TJ), making it robust for various environmental conditions. Key electrical characteristics include a gate-source voltage range of ±20V and a gate charge of 86nC typical at 10V.
Applications for the SIR826ADP-T1-GE3 include primary side switching and synchronous rectification. Its robust design and specifications make it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current is 60A at a case temperature of 25°C.
The maximum on-resistance is 5.5mOhm at Vgs=10V and Id=20A.
The operating junction temperature range is -55°C to 150°C.
The device is housed in a PowerPAK SO-8 surface-mount package.
The maximum gate threshold voltage is 2.8V at a drain current of 250µA.
The typical gate charge is 25nC.