| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,444 pcs
|
1444 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR820DP-T1-GE3 is a single N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 30V and a maximum continuous drain current of 40A at 25°C case temperature. The MOSFET exhibits a low on-resistance, with RDS(on) as low as 3mOhm at 15A and 10V gate-source voltage.
This device utilizes TrenchFET power MOSFET technology and is 100% Rg and UIS tested. It is suitable for DC/DC converters, serving as a low-side switch in applications such as notebook PCs, graphic cards, and servers. The component is packaged in a PowerPAK SO-8, designed for surface mounting.
Key electrical characteristics include a gate charge (Qg) of 95nC maximum at 10V Vgs and an input capacitance (Ciss) of 3512pF maximum at 15V Vds. The operating temperature range is from -55°C to +150°C. The PowerPAK SO-8 package is a leadless package, and specific soldering recommendations should be followed as outlined in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
The maximum continuous drain current is 40A (Tc).
The operating junction and storage temperature range is -55°C to +150°C.
The on-resistance is a maximum of 3mOhm at 15A and 10V.
The component is in a PowerPAK SO-8 package.