SIR818DP-T1-GE3 The Vishay Dale SIR818DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 50A continuous current rating. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR818DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR818DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 50A continuous current rating. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 150,881 pcs
$ Price Range: $0.99

SIR818DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SIR818DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR818DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR818DP is an N-Channel Power MOSFET designed for low-side switching applications in DC/DC converters. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 50A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 2.8mOhm at 20A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 2.4V at 250µA. The MOSFET features a gate charge (Qg) of 95nC at 10V and an input capacitance (Ciss) of 3660pF at 15V.

 

This device is built using TrenchFET Gen III technology and is 100% Rg and UIS tested. It operates within a junction temperature range of -55°C to 150°C. The component is supplied in a surface-mount PowerPAK SO-8 package, suitable for various electronic designs.

 

Applications include notebook PCs, servers, and POL converters. The MOSFET is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SIR818DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiR818DP N-Channel 30V Power MOSFET
Subcategory: N-Channel

SIR818DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR818DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR818DP-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low on-resistance of 2.8mOhm.
  • 50A continuous drain current.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and RoHS3 compliant.

SIR818DP-T1-GE3 Applications

  • Low-side switch for DC/DC converters.
  • Used in notebook PCs.
  • Suitable for server applications.
  • Applied in POL converters.
  • Designed for ORing circuits.

SIR818DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SIR818DP-T1-GE3?

30V.

What package does the SIR818DP-T1-GE3 come in?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the maximum on-resistance of the SIR818DP-T1-GE3?

The maximum on-resistance is 2.8mOhm at Vgs=10V and 20A, and 3.3mOhm at Vgs=4.5V and 20A.

What is the maximum continuous drain current?

50A at case temperature 25°C, and 32A at ambient temperature 25°C.

What is the gate threshold voltage?

Maximum 2.4V at drain current 250µA.

What is the maximum power dissipation?

69W at case temperature 25°C and 5.2W at ambient temperature 25°C.

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