SIR814DP-T1-GE3 The Vishay Dale SIR814DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is designed for surface mounting in a PowerPAK SO-8 package.
Mfr Part #:

SIR814DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR814DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is designed for surface mounting in a PowerPAK SO-8 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SIR814DP-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 13+ On Request On Request

SIR814DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR814DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR814DP-T1-GE3 is an N-Channel MOSFET designed for various power applications. It features a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 60A at 25°C case temperature. The on-resistance (Rds On) is as low as 2.1mOhm at 20A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET technology and comes in a PowerPAK SO-8 surface mount package. It operates within a temperature range of -55°C to 150°C. The device is compliant with RoHS3 standards and is halogen-free.

 

Key electrical characteristics include a gate charge (Qg) of 27 nC typical at 10V and an input capacitance (Ciss) of 3800 pF maximum at 20V. The gate threshold voltage (Vgs(th)) is 2.3V maximum at 250µA.

 

Applications for this MOSFET include synchronous rectification, DC/DC converters, and industrial power supplies. Its robust design and efficient performance make it suitable for demanding power management tasks.

SIR814DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 40V 60A PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR814DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR814DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR814DP-T1-GE3 Features

  • 40V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 2.1mOhm on-resistance.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and RoHS3 compliant.

SIR814DP-T1-GE3 Applications

  • Used for synchronous rectification.
  • Suitable for DC/DC converters.
  • Ideal for POL applications.
  • Applicable in IBC circuits.
  • Designed for industrial use.

SIR814DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIR814DP-T1-GE3?

The drain-source voltage (Vds) for the SIR814DP-T1-GE3 is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A when the case temperature is 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.1mOhm at a drain current of 20A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What is the package type for the SIR814DP-T1-GE3?

The SIR814DP-T1-GE3 is supplied in a PowerPAK SO-8 package.

Is this product RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

Is the SIR814DP-T1-GE3 halogen-free?

Yes, this component is halogen-free.

Home
Account

Categories