SIR804DP-T1-GE3 The SIR804DP-T1-GE3 is a 100V, 60A N-Channel MOSFET from Vishay Dale. It features a low on-resistance of 7.2mOhm at 10V Vgs and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR804DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The SIR804DP-T1-GE3 is a 100V, 60A N-Channel MOSFET from Vishay Dale. It features a low on-resistance of 7.2mOhm at 10V Vgs and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 25,841 pcs
$ Price Range: $0.99

SIR804DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,829 pcs
25829 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12 pcs
12 pcs On Request 1 On Request On Request On Request On Request On Request

SIR804DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR804DP-T1-GE3 Description

Short technical summary and product information.

The SIR804DP-T1-GE3 is an N-channel enhancement mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power conversion applications. The device is rated for a maximum drain-to-source voltage of 100V and can handle a continuous drain current of 60A at case temperature 25°C. At ambient temperature 25°C, the continuous drain current is 20.8A. The maximum on-resistance is 7.2mOhm at Vgs=10V and Id=20A.

 

The MOSFET has a maximum gate-source voltage threshold of 3V at 250µA. The input capacitance is 2450pF at Vds=50V, and the total gate charge is 76nC at Vgs=10V. These parameters indicate moderate switching performance suitable for medium-frequency switching applications. The device can handle pulsed drain currents up to 100A and single-pulse avalanche energy of 61mJ. The maximum power dissipation is 104W at case temperature 25°C and 6.25W at ambient temperature 25°C.

 

The device is housed in the PowerPAK SO-8 package, which offers a compact footprint and excellent thermal performance. The maximum junction-to-case thermal resistance is 1.2°C/W, and the maximum junction-to-ambient thermal resistance is 20°C/W (for t≤10s). The operating junction temperature range is -55°C to 150°C. This package is suitable for surface-mount assembly and provides efficient heat dissipation for high-power applications.

SIR804DP-T1-GE3 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel 100V 60A MOSFET in PowerPAK SO-8 Package
Subcategory: Single

SIR804DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR804DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR804DP-T1-GE3 Features

  • N-Channel 100V TrenchFET power MOSFET.
  • 60A continuous drain current capability.
  • Low 7.2mOhm on-resistance at 10V.
  • PowerPAK SO-8 surface mount package.
  • 100% Rg and UIS tested for reliability.

SIR804DP-T1-GE3 Applications

  • Primary side switch in DC/DC converters
  • Fixed telecom power supply applications
  • N-channel load switching up to 100V
  • High-efficiency power conversion designs
  • Synchronous rectification in telecom systems

SIR804DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIR804DP-T1-GE3?

100V.

What is the continuous drain current rating at case temperature 25°C?

60A.

What package is the SIR804DP-T1-GE3 available in?

PowerPAK SO-8.

What is the on-resistance of the SIR804DP-T1-GE3?

7.2mOhm maximum at Vgs=10V and Id=20A.

What is the operating junction temperature range?

-55°C to 150°C.

What is the total gate charge of the SIR804DP-T1-GE3?

76nC at Vgs=10V.

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