| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR800DP-T1-GE3 is a single N-Channel MOSFET designed for DC/DC conversion, low voltage drive, POL, OR-ing, and fixed telecom applications. It features TrenchFET Gen III technology, offering a low on-resistance of 2.3 mOhm at 15A and 10V Vgs.
Key electrical specifications include a 20V drain-source voltage (Vds) and a maximum continuous drain current of 50A at 25°C case temperature. The gate-source voltage (Vgs) range is ±12V, with a threshold voltage of 1.5V at 250µA. Input capacitance (Ciss) is 5125 pF at 10V, and gate charge (Qg) is 133 nC at 10V.
This MOSFET operates within a junction temperature range of -55°C to 150°C. It is packaged in a surface-mount PowerPAK SO-8 configuration. The maximum power dissipation is 69W at 25°C case temperature and 5.2W at 25°C ambient temperature. Thermal resistance junction-to-ambient is 24°C/W, and junction-to-case is 1.8°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
PowerPAK SO-8 surface-mount package.
-55°C to 150°C.
Yes, it is lead (Pb)-free.
Yes, it is halogen-free.
41 nC.
50 A.