| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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178 pcs
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178 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Manufacturer Name | |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| Halogen Free | |
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| Tape & Reel | |
| Vgs (Max) |
The Vishay Dale SIR774DP-T1-GE3 is an N-Channel Power MOSFET designed for applications such as VRM, POL, and Notebook power management. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 40A at 25°C case temperature.
This MOSFET offers a low on-state resistance, with a maximum of 0.0026 Ohms at VGS = 10V and 15A, and 0.0034 Ohms at VGS = 4.5V and 10A. It is built with Vishay's SkyFET and TrenchFET technologies, ensuring high performance and reliability. The device is 100% R g and UIS tested.
Packaged in a PowerPAK SO-8 surface-mount package, the SIR774DP-T1-GE3 is suitable for space-constrained designs. It is compliant with RoHS Directive 2002/95/EC and is Halogen-free according to IEC 61249-2-21 definition. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
40 A at case temperature 25°C; 32 A at ambient temperature 25°C.
2.1 mOhm minimum and 2.6 mOhm maximum at Vgs=10V, ID=15A. At Vgs=4.5V, ID=10A, the on-resistance is 2.7 mOhm typical and 3.4 mOhm maximum.
-55 to 150 °C.
The MOSFET is supplied in a PowerPAK SO-8 package for surface-mount assembly.
The gate-source threshold voltage is 1 V minimum and 2.2 V typical at VDS=VGS, ID=250 uA.
Yes, the datasheet indicates halogen-free and lead (Pb)-free construction.