| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR770DP-T1-GE3 is a dual N-channel MOSFET designed for power applications. It offers a 30V drain-source voltage rating and a continuous drain current of 8A at 25°C case temperature. The MOSFET utilizes TrenchFET technology for low on-resistance, specified at 21mOhm at 8A and 10V Vgs.
This device integrates two N-channel MOSFETs and a Schottky diode within a single PowerPAK SO-8 package. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 17.8W at 25°C case temperature. It is suitable for synchronous converter and fixed telecom applications.
The SIR770DP-T1-GE3 is surface-mounted and features a logic-level gate, making it compatible with lower gate drive voltages. It is compliant with RoHS 3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The maximum continuous drain current is 8A.
The maximum on-resistance is 21mOhm at 8A and 10V.
The operating junction and storage temperature range is -55°C to 150°C.
It is in a PowerPAK SO-8 Dual package.
Yes, it is RoHS 3 Compliant.
The Moisture Sensitivity Level is 1.