| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,985 pcs
|
26985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiR698DP is an N-Channel TrenchFET® Power MOSFET designed for high efficiency applications. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 7.5A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 195mΩ at a gate-source voltage (Vgs) of 10V, and a typical gate charge (Qg) of 5.2 nC, contributing to high efficiency.
This MOSFET is suitable for applications such as LED monitor boost and dimming circuits. It is packaged in a PowerPAK® SO-8 surface-mount package, which is a leadless package designed for efficient thermal performance. The operating junction temperature range is -55°C to 150°C.
The device is manufactured using TrenchFET® technology and is 100% R g and UIS tested. It is also compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100 V.
The maximum continuous drain current is 7.5A at 25°C case temperature.
The Rds On (Max) is 195mΩ at 2.5A and 10V.
The package type is PowerPAK® SO-8.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
Yes, it is halogen-free.