| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR696DP-T1-GE3 is an N-Channel MOSFET designed for various applications including fixed telecom, DC/DC converters, and battery management. It utilizes ThunderFET® technology to optimize the balance of RDS(on), Qg, Qsw, and Qoss.
Key electrical specifications include a maximum drain-source voltage (Vds) of 125V and a continuous drain current (Id) of 60A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 11.5mOhm at 20A drain current and 10V gate-source voltage. The gate charge (Qg) is typically 19.4nC at 10V.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It is packaged in a PowerPAK® SO-8 surface-mount package, offering efficient thermal performance with a maximum junction-to-case thermal resistance of 1.2°C/W.
The device is RoHS3 compliant and halogen-free, suitable for modern electronic designs requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 125V.
The continuous drain current (Id) is 60A at a case temperature of 25°C.
The maximum on-resistance is 11.5mOhm when the drain current is 20A and the gate-source voltage is 10V.
The typical gate charge (Qg) is 19.4nC at a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in a PowerPAK® SO-8 package.
Yes, this MOSFET is RoHS3 Compliant.