| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR692DP-T1-RE3 is a high-performance N-Channel MOSFET featuring ThunderFET® technology for optimized balance of RDS(on), Qg, Qsw, and Qoss. It is rated for a maximum drain-source voltage of 250V and a continuous drain current of 24.2A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 63mOhm at 10A and 10V, and a gate charge of 30nC typical at 7.5V. The MOSFET operates over a wide temperature range of -55°C to 150°C.
This device is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It is designed for applications such as DC/DC converters, primary side switching, and synchronous rectification. The component is tested for Rg and UIS, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximim drain-source voltage is 250 V.
The continuous drain current is 24.2 A at Tc = 25°C.
The maximum on-resistance is 63 mOhm at Vgs = 10V and Id = 10A.
The operating junction temperture range is -55°C to 150°C.
It is avilable in the PowerPAK® SO-8 surface mount package.
The maximum gate charge is 30 nC at Vgs = 7.5 V.
The maximum pulsed drain current is 50 A with a 100 microsecond pulse width.