SIR681DP-T1-RE3 The Vishay Dale SIR681DP-T1-RE3 is a P-Channel MOSFET designed for power applications. It features an 80V drain-source voltage and a low on-resistance of 11.2mOhm at 10A, 10V.
Mfr Part #:

SIR681DP-T1-RE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR681DP-T1-RE3 is a P-Channel MOSFET designed for power applications. It features an 80V drain-source voltage and a low on-resistance of 11.2mOhm at 10A, 10V.
✓ Total Stock: 53,200 pcs
$ Price Range: $0.99

SIR681DP-T1-RE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
53,200 pcs
53200 pcs On Request 1 On Request On Request On Request On Request On Request

SIR681DP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR681DP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR681DP-T1-RE3 is a P-Channel power MOSFET from the TrenchFET® Gen IV family. It is designed to minimize voltage drop and conduction loss with a very low R DS(on) of 11.2mOhm at VGS = -10V and ID = -10A. This MOSFET operates with a drain-source voltage of up to -80V and can handle a continuous drain current of up to -71.9A at 25°C case temperature.

 

Key electrical characteristics include a gate charge (Qg) of 31.7 nC typical and an input capacitance (Ciss) of 4850 pF maximum. The gate-source voltage (Vgs) rating is ±20V, and the gate threshold voltage (Vgs(th)) is 2.6V maximum at 250µA.

 

This device is housed in a PowerPAK SO-8 package, suitable for surface mounting. It is rated for an operating temperature range of -55°C to +150°C. The SIR681DP-T1-RE3 is suitable for applications such as adapter and charger switches, battery and circuit protection, load switches, and motor drive control.

SIR681DP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR681DP-T1-RE3 P-Channel 80V Power MOSFET
Subcategory: P-Channel

SIR681DP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR681DP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR681DP-T1-RE3 Features

  • P-Channel 80V Power MOSFET
  • Very low Rds(on) minimizes loss
  • High continuous drain current
  • Surface mount PowerPAK SO-8 package
  • TrenchFET® Gen IV technology

SIR681DP-T1-RE3 Applications

  • Adapter and charger switch
  • Battery and circuit protection
  • Load switch applications
  • Motor drive control circuits

SIR681DP-T1-RE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIR681DP-T1-RE3?

The maximum drain-source voltage (Vds) for the SIR681DP-T1-RE3 is 80V.

What is the on-resistance of the SIR681DP-T1-RE3 at 10A and 10V?

The maximum on-resistance (Rds On) for the SIR681DP-T1-RE3 at 10A and 10V is 11.2mOhm.

What is the continuous drain current rating for the SIR681DP-T1-RE3 at 25°C case temperature?

The continuous drain current (Id) for the SIR681DP-T1-RE3 at 25°C case temperature is -71.9A.

What is the operating temperature range for the SIR681DP-T1-RE3?

The operating junction and storage temperature range for the SIR681DP-T1-RE3 is -55°C to +150°C.

What package type is the SIR681DP-T1-RE3 available in?

The SIR681DP-T1-RE3 is available in the PowerPAK SO-8 package.

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