| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SiR680DP is an N-Channel Power MOSFET designed for applications requiring high efficiency and performance. It features TrenchFET Gen IV technology, offering very low RDS(on) and optimized RDS-Qg and RDS-Qoss figures-of-merit.
Key electrical specifications include a maximum drain-source voltage of 80V and a continuous drain current of up to 100A at 25°C case temperature. The Rds(on) is as low as 2.9mOhm at a gate-source voltage of 10V and a drain current of 20A. The typical gate charge (Qg) is 53.5 nC at 7.5V gate-source voltage.
This MOSFET is housed in a PowerPAK SO-8 single package, suitable for surface mounting. It operates over a junction temperature range of -55°C to +150°C. The device is 100% Rg and UIS tested, making it suitable for synchronous rectification, DC/DC converters, power supplies, and motor drive control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80 V.
The device is supplied in a PowerPAK SO-8 surface-mount package.
The junction operating temperature range is -55°C to +150°C.
The maximum continuous drain current is 100 A at a case temperature of 25°C.
The maximum on-resistance is 2.9 mΩ at Vgs = 10 V, Id = 20 A, and 3.4 mΩ at Vgs = 7.5 V.
The typical gate charge is 53.5 nC at Vgs = 7.5 V, with a maximum of 81 nC.
The maximum gate threshold voltage is 3.4 V at Id = 250 µA.