SIR680ADP-T1-RE3 The Vishay Dale SIR680ADP-T1-RE3 is an N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR680ADP-T1-RE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR680ADP-T1-RE3 is an N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 1,405 pcs
$ Price Range: $0.99

SIR680ADP-T1-RE3 Available from 1 distributor

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✓ Non-Authorised
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SIR680ADP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR680ADP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR680ADP-T1-RE3 is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 80V and a continuous drain current capability of up to 125A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 2.88mOhm at 20A and 10V Vgs. The gate charge (Qg) is typically 43nC at 10V Vgs. The MOSFET operates over a wide temperature range from -55°C to 150°C.

 

This device utilizes TrenchFET Gen IV technology, offering a very low RDS-Qg figure-of-merit. It is suitable for applications such as synchronous rectification, DC/DC converters, power supplies, and motor drive control. The component is supplied in a surface-mount PowerPAK SO-8 package.

 

Absolute maximum ratings include a continuous drain current of 125A at 25°C case temperature and 30.7A at 25°C ambient temperature. Maximum power dissipation is rated at 104W at 25°C case temperature and 6.25W at 25°C ambient temperature.

SIR680ADP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: SiR680ADP N-Channel 80 V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR680ADP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR680ADP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR680ADP-T1-RE3 Features

  • N-Channel 80V Power MOSFET.
  • Low RDS-Qg figure-of-merit.
  • 2.88mOhm max RdsOn at 10V.
  • 125A continuous drain current.
  • Surface mount PowerPAK SO-8 package.

SIR680ADP-T1-RE3 Applications

  • Used for synchronous rectification.
  • Suitable for DC/DC converters.
  • Primary side switching applications.
  • Power supply designs.
  • Motor drive control circuits.

SIR680ADP-T1-RE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIR680ADP-T1-RE3?

The drain-source voltage (Vds) is 80V.

What is the maximum continuous drain current for the SIR680ADP-T1-RE3?

The maximum continuous drain current is 125A at 25°C case temperature.

What is the typical gate charge of the SIR680ADP-T1-RE3?

The typical gate charge (Qg) is 43nC at 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIR680ADP-T1-RE3 MOSFET supplied in?

It is supplied in a PowerPAK SO-8 package.

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