SIR670DP-T1-GE3 The Vishay Dale SIR670DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating and a continuous current capability of 60A. It features low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR670DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR670DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating and a continuous current capability of 60A. It features low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

SIR670DP-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 1528+ On Request On Request

SIR670DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SIR670DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR670DP-T1-GE3 is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 4.8mΩ at 20A and 10V Vgs, and a gate charge (Qg) of 63nC maximum at 10V Vgs. The MOSFET operates within a wide temperature range of -55°C to 150°C.

 

This device utilizes TrenchFET power MOSFET technology and is tested for Rg and UIS. It is suitable for applications such as primary side switching, synchronous rectification, DC/DC converters, boost converters, and DC/AC inverters.

 

The SIR670DP-T1-GE3 comes in a PowerPAK SO-8 package, designed for surface mounting. This leadless package offers efficient thermal performance, with a maximum power dissipation of 56.8W at 25°C case temperature and 5W at 25°C ambient temperature.

SIR670DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR670DP-T1-GE3 N-Channel 60 V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR670DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR670DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR670DP-T1-GE3 Features

  • 60V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 4.8mOhm max Rds On.
  • Surface mount PowerPAK SO-8 package.
  • Lead-free and halogen-free.

SIR670DP-T1-GE3 Applications

  • Primary side switching applications.
  • Synchronous rectification circuits.
  • DC/DC converter designs.
  • Boost converter circuits.
  • DC/AC inverter systems.

SIR670DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIR670DP-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 60A at a case temperature of 25°C and 24A at an ambient temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 4.8mΩ at Vgs=10V and 20A, 6.0mΩ at Vgs=6V, and 7.8mΩ at Vgs=4.5V.

What package does the SIR670DP-T1-GE3 come in?

It comes in a PowerPAK SO-8 surface-mount package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What is the maximum power dissipation?

The maximum power dissipation is 56.8W at a case temperature of 25°C and 5W at an ambient temperature of 25°C.

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