SIR668ADP-T1-RE3 The Vishay Dale SIR668ADP-T1-RE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 93.6A. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIR668ADP-T1-RE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR668ADP-T1-RE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 93.6A. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 12,724 pcs
$ Price Range: $0.99

SIR668ADP-T1-RE3 Available from 4 distributors

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SIR668ADP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR668ADP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR668ADP-T1-RE3 is an N-Channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 93.6A at 25°C case temperature. The on-resistance (Rds On) is as low as 4.8mOhm at 20A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET Gen IV technology, offering a very low RDS-Qg figure-of-merit. It is tuned for the lowest RDS-Qoss FOM and is 100% Rg and UIS tested. The operating temperature range is -55°C to +150°C (TJ).

 

The component is packaged in a PowerPAK SO-8, designed for surface mounting. Its high power dissipation capability of 104W (Tc) makes it suitable for demanding applications.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a gate charge (Qg) of 81nC typical at 10V. Input capacitance (Ciss) is 3750pF at 50V.

SIR668ADP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: SIR668ADP-T1-RE3 N-Channel 100V PowerPAK SO-8 MOSFET
Subcategory: PowerPAK SO-8

SIR668ADP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR668ADP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR668ADP-T1-RE3 Features

  • 100V drain-source voltage rating.
  • 93.6A continuous drain current.
  • Low 4.8mOhm on-resistance.
  • Surface mount PowerPAK SO-8 package.
  • TrenchFET Gen IV power MOSFET technology.

SIR668ADP-T1-RE3 Applications

  • Used for synchronous rectification.
  • Suitable for DC/DC converters.
  • Applied in primary side switching.
  • Ideal for power supplies.
  • Used in motor drive control.

SIR668ADP-T1-RE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIR668ADP-T1-RE3?

The drain-source voltage is 100V.

What is the maximum continuous drain current for the SIR668ADP-T1-RE3?

The maximum continuous drain current is 93.6A at a case temperature of 25°C.

What is the on-resistance of the SIR668ADP-T1-RE3?

The on-resistance is a maximum of 4.8mOhm at 20A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIR668ADP-T1-RE3 MOSFET in?

It is in a PowerPAK SO-8 package.

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