| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR664DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current of 60A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 6mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 40nC at 10V Vgs. The input capacitance (Ciss) is 1750pF at 30V Vds, and the gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA Id.
This MOSFET utilizes TrenchFET technology and is packaged in a PowerPAK SO-8 surface-mount package. It is suitable for applications such as primary side switching, synchronous rectification, and DC/DC converters. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V
PowerPAK SO-8
-55 °C to 150 °C
60 A at a case temperature of 25 °C
Maximum 40 nC at a gate-to-source voltage of 10 V
1750 pF measured at a drain-to-source voltage of 30 V
6 mΩ at 20A drain current and 10V gate voltage