SIR662DP-T1-GE3 The Vishay Dale SIR662DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage. It features a low on-resistance of 2.7 mOhm at 20A and 10V gate-source voltage.
Mfr Part #:

SIR662DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR662DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage. It features a low on-resistance of 2.7 mOhm at 20A and 10V gate-source voltage.
✓ Total Stock: 53,283 pcs
$ Price Range: $0.99

SIR662DP-T1-GE3 Available from 5 distributors

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SIR662DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR662DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR662DP-T1-GE3 is an N-Channel MOSFET designed for high efficiency applications. It operates with a drain-source voltage of 60V and offers a low on-resistance of 2.7 mOhm at a drain current of 20A and gate-source voltage of 10V.

 

This MOSFET features a gate charge of 96 nC at 10V and an input capacitance of 4365 pF at 30V. It is built using TrenchFET technology for improved performance.

 

The device is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The maximum power dissipation is 104W under case temperature conditions and 6.25W under ambient temperature conditions.

 

Applications include primary side switching, POL, synchronous rectification, and DC/DC converters in industrial and LED backlighting systems.

SIR662DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR662DP-T1-GE3 N-Channel 60V Power MOSFET
Subcategory: N-Channel

SIR662DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR662DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR662DP-T1-GE3 Features

  • N-Channel 60V MOSFET
  • Low Rds On: 2.7mOhm at 20A, 10V
  • Low Gate Charge: 96nC typical
  • Surface Mount PowerPAK SO-8 package
  • TrenchFET technology for high efficiency

SIR662DP-T1-GE3 Applications

  • Primary side switching applications
  • Suitable for POL converters
  • Used in synchronous rectification
  • DC/DC converter designs
  • Industrial and LED backlighting

SIR662DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIR662DP-T1-GE3?

The drain-source voltage is 60V.

What is the maximum on-resistance for the SIR662DP-T1-GE3?

The maximum on-resistance is 2.7 mOhm at a drain current of 20A and gate-source voltage of 10V.

What is the gate charge of the SIR662DP-T1-GE3?

The typical gate charge is 96 nC at a gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIR662DP-T1-GE3 in?

It is in a PowerPAK SO-8 package, designed for surface mounting.

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