| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
410 pcs
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410 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR642DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 60A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 2.4mOhm at 15A and 10V Vgs, with a gate charge (Qg) of 84nC at 10V Vgs. The input capacitance (Ciss) is rated at 4155pF at 20V Vds. The device operates within a junction temperature range of -55°C to 150°C.
Packaged in a PowerPAK SO-8 surface mount package, the SIR642DP-T1-GE3 is suitable for various power management applications. Its specifications make it a robust choice for high-current switching tasks.
Environmental compliance includes RoHS3 compliance, MSL 1 rating, and REACH unaffected status. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 60A at 25°C case temperature.
The maximum on-resistance is 2.4mOhm at 15A drain current and 10V gate-source voltage.
It is supplied in a PowerPAK SO-8 surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.