| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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364 pcs
|
364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The SIR638ADP-T1-RE3 is an N-Channel MOSFET from Vishay Dale designed for high-efficiency power conversion. It offers a maximum drain-source voltage of 40V and a continuous drain current of 100A at 25°C case temperature. The on-resistance is typically 0.88mOhm at 10V gate drive, enabling low conduction losses. Gate charge is 53 nC typical, and input capacitance is 9100 pF at 100V, contributing to fast switching performance with rise time of 42 ns and fall time of 10 ns. The device is housed in a PPAK SO-8 surface-mount package, suitable for compact power designs. Operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 104W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
-55°C to 150°C (junction).
100 A.
0.88 mOhm maximum.
53 nC.
9100 pF at 100 V.
104 W.