SIR626LDP-T1-RE3 The Vishay Dale SIR626LDP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low Rds On of 1.5mOhm at 10V.
Mfr Part #:

SIR626LDP-T1-RE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR626LDP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low Rds On of 1.5mOhm at 10V.
✓ Total Stock: 44,000 pcs
$ Price Range: $0.99

SIR626LDP-T1-RE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
44,000 pcs
44000 pcs On Request 1 On Request On Request 22+ On Request On Request

SIR626LDP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR626LDP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR626LDP-T1-RE3 is an N-Channel Power MOSFET designed for various applications including synchronous rectification and DC/DC converters. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 186A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1.5mOhm at 10V gate-source voltage and 20A drain current. The typical gate charge (Qg) is 41nC. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This component is housed in a surface-mount PowerPAK SO-8 package, suitable for space-constrained designs. Its TrenchFET Gen IV technology provides a very low RDS-Qg figure-of-merit.

SIR626LDP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiR626LDP N-Channel 60 V Power MOSFET
Subcategory: N-Channel

SIR626LDP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR626LDP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR626LDP-T1-RE3 Features

  • N-Channel 60V Power MOSFET
  • Low Rds On: 1.5mOhm max @ 10V
  • High continuous drain current: 186A
  • TrenchFET Gen IV technology
  • Surface mount PowerPAK SO-8 package

SIR626LDP-T1-RE3 Applications

  • Synchronous rectification applications
  • DC/DC converter designs
  • Primary side switching
  • Motor drive switch applications
  • Battery and load switch circuits

SIR626LDP-T1-RE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SIR626LDP-T1-RE3?

The maximum drain-to-source voltage (Vdss) is 60 V.

What is the continuous drain current rating?

The continuous drain current is 186 A at case temperature (Tc = 25°C) and 45.6 A at ambient temperature (Ta = 25°C).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.5 mΩ at Vgs = 10 V, Id = 20 A, and 2.1 mΩ at Vgs = 4.5 V.

What package does the SIR626LDP-T1-RE3 come in?

It is available in the PowerPAK SO-8 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate charge of this device?

Typical gate charge (Qg) is 41 nC; maximum is 135 nC at Vgs = 10 V.

What is the input capacitance?

Maximum input capacitance (Ciss) is 5900 pF at Vds = 30 V.

Home
Account

Categories