| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44,000 pcs
|
44000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR626LDP-T1-RE3 is an N-Channel Power MOSFET designed for various applications including synchronous rectification and DC/DC converters. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 186A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.5mOhm at 10V gate-source voltage and 20A drain current. The typical gate charge (Qg) is 41nC. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is housed in a surface-mount PowerPAK SO-8 package, suitable for space-constrained designs. Its TrenchFET Gen IV technology provides a very low RDS-Qg figure-of-merit.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60 V.
The continuous drain current is 186 A at case temperature (Tc = 25°C) and 45.6 A at ambient temperature (Ta = 25°C).
The maximum on-resistance is 1.5 mΩ at Vgs = 10 V, Id = 20 A, and 2.1 mΩ at Vgs = 4.5 V.
It is available in the PowerPAK SO-8 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Typical gate charge (Qg) is 41 nC; maximum is 135 nC at Vgs = 10 V.
Maximum input capacitance (Ciss) is 5900 pF at Vds = 30 V.