SIR626ADP-T1-RE3 The Vishay SiR626ADP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage and a maximum continuous drain current of 165A (Tc). It features a low Rds(on) of 1.75mOhm at 10V Vgs.
Mfr Part #:

SIR626ADP-T1-RE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SiR626ADP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage and a maximum continuous drain current of 165A (Tc). It features a low Rds(on) of 1.75mOhm at 10V Vgs.
✓ Total Stock: 1,430,020 pcs
$ Price Range: $0.99

SIR626ADP-T1-RE3 Available from 3 distributors

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SIR626ADP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Voltage
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR626ADP-T1-RE3 Description

Short technical summary and product information.

This Vishay SiR626ADP-T1-RE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 60V drain-source voltage and a significant continuous drain current capability of 165A at 25°C case temperature, and 40.4A at 25°C ambient temperature.

 

The MOSFET boasts a low on-resistance (Rds(on)) of 1.75mOhm at 10V Vgs, contributing to reduced conduction losses. Its typical gate charge (Qg) is 42.5nC, and the maximum gate charge is 83nC at 10V Vgs, indicating efficient switching characteristics.

 

Packaged in a PowerPAK® SO-8 surface-mount package, this device is suitable for applications requiring compact designs. The operating temperature range is -55°C to 150°C (TJ), making it robust for various industrial environments. Key applications include synchronous rectification, DC/DC converters, and motor drive switching.

 

Key electrical parameters include a gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 3.5V at 250µA. The device also has a maximum power dissipation of 104W (Tc) at 25°C.

SIR626ADP-T1-RE3 Quick Information

Product Type: MOSFET
Series: SiR626ADP
Canonical Name: Vishay SiR626ADP-T1-RE3 N-Channel 60V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR626ADP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR626ADP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR626ADP-T1-RE3 Features

  • N-Channel 60V Power MOSFET
  • Low Rds(on) of 1.75mOhm at 10V
  • High continuous drain current 165A
  • PowerPAK SO-8 surface mount package
  • Wide operating temperature range

SIR626ADP-T1-RE3 Applications

  • Synchronous rectification applications
  • DC/DC converter designs
  • Primary side switching
  • Motor drive switch circuits
  • Industrial applications

SIR626ADP-T1-RE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the SIR626ADP-T1-RE3?

The maximum drain-source voltage is 60V.

What package is the SIR626ADP-T1-RE3 available in?

The device is housed in a PowerPAK SO-8 package.

What is the operating temperature range?

-55°C to +150°C.

What is the maximum continuous drain current at case temperature 25°C?

165A.

What is the typical on-resistance at Vgs=10V?

The maximum on-resistance is 1.75 mOhm at Vgs=10V and Id=20A.

What is the maximum power dissipation at case temperature 25°C?

104W.

What is the typical gate charge at Vgs=10V?

The typical gate charge is 83 nC at Vgs=10V.

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