| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The SIR624DP-T1-GE3 is an N-Channel MOSFET from Vishay Dale, designed for various applications including fixed telecom and DC/DC converters. It features ThunderFET® technology for optimized RDS(on), Qg, Qsw, and Qoss.
Key electrical specifications include a 200V drain-to-source voltage and a continuous drain current of 18.6A at 25°C (TC). The on-state resistance is a maximum of 60mOhm at 10A and 10V VGS. The device has a typical gate charge of 18nC at 7.5V VGS and a maximum gate threshold voltage of 4V at 250µA.
This MOSFET is designed for surface mount applications and comes in a PowerPAK SO-8 package. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 52W (TC) at 25°C.
The SIR624DP-T1-GE3 is compliant with RoHS3 and REACH regulations, and is halogen-free and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating (Vds) for the SIR624DP-T1-GE3 is 200V.
The continuous drain current (Id) for the SIR624DP-T1-GE3 is 18.6A at 25°C (TC).
The maximum on-state resistance (Rds On) for the SIR624DP-T1-GE3 is 60mOhm at 10A and 10V VGS.
The typical gate charge (Qg) for the SIR624DP-T1-GE3 is 18nC at 7.5V VGS.
The operating junction and storage temperature range for the SIR624DP-T1-GE3 is -55°C to 150°C (TJ).
The SIR624DP-T1-GE3 MOSFET is supplied in a PowerPAK SO-8 package for surface mounting.