| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,873 pcs
|
32873 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,075 pcs
|
9075 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The Vishay Dale SIR622DP-T1-GE3 is an N-Channel MOSFET designed for various applications including fixed telecom, DC/DC converters, primary and secondary side switching, battery management, and synchronous rectification. It utilizes ThunderFET® technology to optimize the balance of RDS(on), Qg, Qsw, and Qoss.
Key electrical specifications include a maximum drain-source voltage (VDS) of 150V and a continuous drain current (ID) of 51.6A at 25°C case temperature. The on-resistance (RDS(on)) is rated at a maximum of 17.7mOhm at 20A drain current and 10V gate-source voltage. The typical gate charge (Qg) is 20.7nC at 7.5V gate-source voltage.
This MOSFET is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is 100% Rg and UIS tested, ensuring reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SIR622DP-T1-GE3 is 150V.
The continuous drain current (ID) for the SIR622DP-T1-GE3 is 51.6A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the SIR622DP-T1-GE3 is 17.7mOhm when measured at 20A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for the SIR622DP-T1-GE3 is -55°C to +150°C.
The SIR622DP-T1-GE3 MOSFET is supplied in a PowerPAK® SO-8 package.