| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR616DP-T1-GE3 is an N-Channel MOSFET designed for various applications including fixed telecom and DC/DC converters. It features ThunderFET® technology for an optimized balance of RDS(on), Qg, Qsw, and Qoss.
Key electrical specifications include a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 20.2A at 25°C case temperature. The on-state resistance (Rds(on)) is a maximum of 50.5mOhm at 10A and 10V gate-source voltage. The gate charge (Qg) is typically 18.3nC at 7.5V gate-source voltage, with a maximum gate-source voltage of ±20V.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 52W at 25°C case temperature. It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V
PowerPAK SO-8
-55°C to 150°C (junction)
18.3 nC at Vgs = 10V
50.5 mOhm at Id = 10A, Vgs = 10V
1450 pF at Vds = 100V
52W at Tc = 25°C